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BU9877FV データシートの表示(PDF) - ROHM Semiconductor

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BU9877FV Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Memory ICs
Block diagram
BU9877FV
A0 1
A1 2
A2 3
GND 4
8bit
Address
Decoder
2048bit EEPROM Array
8bit
Slave · word
Address Register
START
STOP
Control Circuit
Write Protect Control Circuit
High voltage generator
Power supply voltage detector
8bit
Data
Register
ACK
8 Vcc
7 WP
6 SCL
5 SDA
Pin descriptions
Pin No.
Pin name
1, 2, 3
A0, A1, A2
4
GND
5
SDA
6
SCL
7
WP
8
VCC
I/O
Function
I
Slave address setting (pin)
Input / output reference voltage of 0V
I/O
Slave and word address, serial data input / output
I
Serial clock input
I
Write protect input
Connect the power supply to this.
Note: The SDA pin is Nch open drain output, and should be used with external pull-up resistor.
The WP pin is equipped with internal pull-down resistor, so can be left open when used.
Electrical characteristics (unless otherwise noted, Ta = – 40 to + 85°C, Vcc = 2.7V to 5.5V)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input high level voltage
VIH
0.7VCC
V
Input low level voltage
VIL
0.3VCC
V
Output low level voltage VOL
0.4
V
IOL = 3.0mA (SDA)
Input leakage current 1
ILI 1
–1
1
µA
VIN = 0V ~ VCC
Input leakage current 2
ILI 2
–1
20
µA
VIN = 0V ~ VCC (WP)
Output leakage current
ILO
–1
1
µA
VOUT = 0V ~ VCC
Operating current
consumption
ICC
3.0
mA VCC = 5.5V, fSCL = 100kHz
Standby current
ISB
2.0
µA VCC = 5.5V, SDA · SCL = VCC
SCL frequency
fSCL
100
kHz
Measurement circuit
Fig.1
Fig.2
Fig.2
Fig.2
Fig.3
Fig.4
2

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