NTE123AP データシートの表示（PDF） - NTE Electronics

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NTE123AP

Silicon NPN Transistor Audio Amplifier, Switch (Compl to NTE159)

NTE Electronics 

NTE123AP

Silicon NPN Transistor

Audio Amplifier, Switch

(Compl to NTE159)

Absolute Maximum Ratings:

Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V

Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V

Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V

Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA

Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C

Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C

Thermal Resistance, Junction to Case, RθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W

Thermal Resistance, Junction to Ambient, RθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

OFF Characteristics

Collector–Emitter Breakdown Voltage

Collector–Base Breakdown Voltage

Emitter–Base Breakdown Voltage

Collector Cutoff Current

Base Cutoff Current

ON Characteristics (Note 1)

V(BR)CEO IC = 1mA, IB = 0, Note 1

V(BR)CBO IC = 0.1mA, IE = 0

V(BR)EBO IE = 0.1mA, IC = 0

ICEV VCE = 35V, VEB(off) = 0.4V

IBEV VCE = 35V, VEB(off) = 0.4V

DC Current Gain

hFE VCE = 1V, IC = 0.1mA

VCE = 1V, IC = 1mA

VCE = 1V, IC = 10mA

VCE = 1V, IC = 150mA

VCE = 1V, IC = 500mA

Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.

Min Typ Max Unit

40 – –

V

60 – –

V

6––

V

– – 0.1 µA

– – 0.1 µA

20 – –

40 – –

80 – –

100 – 300

40 – –

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