DGT304SE13 データシートの表示（PDF） - Dynex Semiconductor

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DGT304SE13

Gate Turn-off Thyristor

Dynex Semiconductor 

DGT304SE13

PACKAGE DETAILS

For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated

otherwise. DO NOT SCALE.

2 holes Ø3.6 ± 0.1 x 2.0 ± 0.1 deep

(One in each electrode)

Cathode tab

Cathode

Gate

Ø42max

Ø25nom.

Ø25nom.

Nominal weight: 82g

Clamping force: 6kN ±10%

Anode

Package outine type code: E

ASSOCIATED PUBLICATIONS

Title

Calculating the junction temperature or power semiconductors

GTO gate drive units

Recommendations for clamping power semiconductors

Use of V , r on-state characteristic

TO T

Impoved gate drive for GTO series connections

Application Note

Number

AN4506

AN4571

AN4839

AN5001

AN5177

12/13

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