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TC651BEVUA データシートの表示(PDF) - Microchip Technology

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TC651BEVUA Datasheet PDF : 14 Pages
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TC650/TC651
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage (VDD to GND) ................................... +6V
Output Voltage (OUT to GND) ................................. 6V
Voltage On Any Pin ....... (GND – 0.3V) to (VDD + 0.3V)
Package Thermal Resistance (θJA ) .............. 250°C/W
Operating Temperature Range .......... -40°C to +125°C
Storage Temperature ......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum Rat-
ings" may cause permanent damage to the device. These are
stress ratings only and functional operation of the device at
these or any other conditions above those indicated in the
operation sections of the specifications is not implied. Expo-
sure to Absolute Maximum Rating conditions for extended
periods may affect device reliability.
TC650/TC651 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VDD = 2.8V to 5.5V, SHDN = VDD, TA = -40°C to 125°C unless otherwise specified.
Symbol
Parameter
Min
Typ.
Max Units Test Conditions
VDD
IDD
SHDN Input
Supply Voltage
Supply Current
2.8
5.5
V
50
90
µA PWM, TOVER are open
VIH
SHDN Input High Threshold
65
VIL
SHDN Input Low Threshold
PWM Output
%VDD
15
%VDD
VOL
VOH
tR
tF
fOUT
tSTARTUP
PWM Output Low Voltage
PWM Output High Voltage
PWM Rise Time
PWM Fall Time
PWM Frequency
Start-up Time
VDD - 0.5
10
10
10
15
32/fOUT
0.3
V ISINK = 1mA
V ISOURCE = 5mA
µsec IOH = 5mA, 1nF from
PWM to GND
µsec IOL = 1mA, 1nF from
PWM to GND
Hz
sec VDD Rises from GND,
or SHDN Released
Temperature Accuracy
TH ACC
High Temperature Accuracy
(TH –TL) ACC Temp. Range Accuracy
THYST
Auto-shutdown Hysteresis
TOVER Output
VHIGH
VLOW
TOVER ACC
TOVER HYST
TOVER Output High Voltage
TOVER Output Low Voltage
Absolute Accuracy
Trip Point Hysteresis
TH – 3
-1.0
-2.5
VDD - 0.5
TH
(TH -TL)/5
TH + 3
+1.0
+2.5
°C Note 1
°C (TH - TL) 20°C
°C (TH - TL) 20°C
°C TC651 Only
V ISOURCE = 1.2mA
0.4
V ISINK = 2.5mA
TH + 10
°C At Trip Point
5
°C
Note 1: Transition from 90% to 100% Duty Cycle.
© 2002 Microchip Technology Inc.
DS21450B-page 3

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