MMSF2P02ER2 データシートの表示（PDF） - Motorola => Freescale

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MMSF2P02ER2

TMOS Single P-Channel Fields Effect Transistors

Motorola => Freescale 

MMSF2P02E

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

—

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

IDSS

—

—

IGSS

—

VGS(th)

1.0

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 2.0 Adc)

(VGS = 4.5 Vdc, ID = 1.0 Adc)

RDS(on)

—

—

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.0 Adc)

gFS

1.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(3)

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 5.0 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 10 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

QT

—

(VDS = 16 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc)

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(2)

(IS = 2.0 Adc, VGS = 0 Vdc)

VSD

—

Reverse Recovery Time

trr

—

(IS = 2.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Negative sign for P–Channel device omitted for clarity.

(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(3) Switching characteristics are independent of operating junction temperature.

Typ

—

24.7

—

—

—

2.0

4.7

0.19

0.3

2.8

340

220

75

20

40

53

41

13

29

30

28

10

1.1

3.3

2.5

1.5

34

18

16

0.035

Max

Unit

Vdc

—

—

mV/°C

µAdc

1.0

10

100

nAdc

Vdc

3.0

—

mV/°C

Ohm

0.25

0.4

—

Mhos

475

pF

300

150

40

ns

80

106

82

26

ns

58

60

56

15

nC

—

—

—

2.0

Vdc

64

ns

—

—

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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