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SM10LZ47 データシートの表示(PDF) - Toshiba
部品番号
コンポーネント説明
メーカー
SM10LZ47
M10LZ47, SM10LZ47/ BI−DIRECTIONAL TRIODE THYRISTOR
Toshiba
SM10LZ47 Datasheet PDF : 3 Pages
1
2
3
SM10LZ47
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
CHARACTERISTIC
Repetitive Peak Off
−
State Current
I
Gate Trigger Voltage
II
III
I
Gate Trigger Current
II
III
Peak On
−
State Voltage
Gate Non
−
Trigger Voltage
Holding Current
Thermal Resistance
Critical Rate of Rise of Off
−
State Voltage
Critical Rate of Rise of Off
−
State Voltage
at Commutation
SYMBOL
TEST CONDITION
MIN TYP. MAX UNIT
I
DRM
V
DRM
= Rated
―
―
20
µA
V
GT
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (+)
―
―
1.5
T2 (+) , Gate (
−
)
―
―
1.5
V
T2 (
−
) , Gate (
−
)
―
―
1.5
I
GT
V
D
= 12V,
R
L
= 20
Ω
T2 (+) , Gate (+)
―
―
30
T2 (+) , Gate (
−
)
―
―
30
mA
T2 (
−
) , Gate (
−
)
―
―
30
V
TM
I
TM
= 15A
―
―
1.5
V
V
GD
V
D
= Rated, Tc = 125°C
0.2
―
―
V
I
H
V
D
= 12V, I
TM
= 1A
―
―
50
mA
R
th (j
−
c)
dv / dt
Junction to Case, AC
V
DRM
= 600V, T
j
= 125°C
Exponential Rise
―
―
3.4 °C / W
―
300
―
V / µs
(dv / dt) c
V
DRM
= 400V, T
j
= 125°C
(di / dt) c =
−
5.5A / ms
10
―
―
V / µs
MARKING
NUMBER
SYMBOL
*1
TOSHIBA PRODUCT MARK
*2
TYPE
SM10LZ47
MARK
M10LZ47
Example
*3
8A: January 1998
8B: February 1998
8L: December 1998
2
2001-07-10
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