ISL9003AIEMZ-T(2009) データシートの表示（PDF） - Intersil

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ISL9003AIEMZ-T
(Rev.:2009)

Low Noise LDO with Low IQ and High PSRR

Intersil 

ISL9003A

about 30µs/V to minimize current surge. The ISL9003A

provides short-circuit protection by limiting the output current

to about 265mA (typ).

The LDO uses an independently trimmed 1V reference as its

input. An internal resistor divider drops the LDO output

voltage down to 1V. This is compared to the 1V reference for

regulation. The resistor division ratio is programmed in the

factory.

Overheat Detection

The bandgap outputs a proportional-to-temperature current

that is indicative of the temperature of the silicon. This

current is compared with references to determine if the

device is in danger of damage due to overheating. When the

die temperature reaches about +140°C, the LDO

momentarily shuts down until the die cools sufficiently. In the

overheat condition, if the LDO sources more than 50mA it

will be shut off. Once the die temperature falls back below

about +110°C, the disabled LDO is re-enabled and soft-start

automatically takes place.

10

FN6299.4

October 1, 2009

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