K9F2G08X0B データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

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K9F2G08X0B

256M x 8 Bit NAND Flash Memory

Samsung 

K9F2G08B0B

K9F2G08U0B

Preliminary

FLASH MEMORY

System Interface Using CE don’t-care.

For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2,112byte

data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or

audio applications which use slow cycle time on the order of µ-seconds, de-activating CE during the data-loading and serial access

would provide significant savings in power consumption.

Figure 4. Program Operation with CE don’t-care.

CLE

CE

CE don’t-care

WE

ALE

I/Ox

80h Address(5Cycles)

Data Input

Data Input

10h

tCS

tCH

tCEA

CE

CE

tWP

WE

tREA

RE

I/O0~7

out

Figure 5. Read Operation with CE don’t-care.

CLE

CE

RE

ALE

R/B

WE

I/OX

tR

00h

Address(5Cycle)

30h

16

CE don’t-care

Data Output(serial access)

Samsung Confidential

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