K9LAG08U0M-P データシートの表示（PDF） - Samsung
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K9LAG08U0M-P Datasheet PDF : 45 Pages
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K9HBG08U1M
K9LAG08U0M K9MCG08U5M
Advance
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
Short Circuit Current
K9XXG08UXM-XCB0
K9XXG08UXM-XIB0
K9XXG08UXM-XCB0
K9XXG08UXM-XIB0
Symbol
VCC
VIN
VI/O
TBIAS
TSTG
Ios
Rating
Unit
-0.6 to + 4.6
-0.6 to + 4.6
V
-0.6 to Vcc+0.3 (<4.6V)
-10 to +125
°C
-40 to +125
-65 to +150
°C
5
mA
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9XXG08UXM-XCB0 :TA=0 to 70°C, K9XXG08UXM-XIB0:TA=-40 to 85°C)
Parameter
K9XXG08UXM
Symbol
Unit
Min
Typ.
Max
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Page Read with Serial Access ICC1 tRC=30ns, CE=VIL, IOUT=0mA
-
Operating
Current
Program
ICC2
-
-
Erase
ICC3
-
-
15
35
15
35
mA
15
35
Stand-by Current(TTL)
ISB1 CE=VIH, WP=0V/VCC
-
-
1
Stand-by Current(CMOS)
ISB2 CE=VCC-0.2, WP=0V/VCC
-
20
100
Input Leakage Current
ILI VIN=0 to Vcc(max)
-
-
±20
µA
Output Leakage Current
ILO VOUT=0 to Vcc(max)
-
-
±20
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
VIH(1)
-
VIL(1)
-
VOH IOH=-400µA
VOL IOL=2.1mA
IOL(R/B) VOL=0.4V
0.8 x Vcc
-
VCC+0.3
-0.3
-
0.2 x Vcc
V
2.4
-
-
-
-
0.4
8
10
-
mA
NOTE :
1. VIL can undershoot to -0.4V and VIH can overshoot to VCC + 0.4V for durations of 20 ns or less.
2. Typical value are measured at Vcc=3.3V, TA=25°C. Not 100% tested.
3. The typical value of the K9HBG08U1M’s ISB2 is 40µA and the maximum value is 200µA.
4. The typical value of the K9MCG08U5M’s ISB2 is 80µA and the maximum value is 400µA.
5. The maximum value of K9HBG08U1M-Y,P’s ILI and ILO is ±40µA and the maximum value of K9HBG08U1M-I’s ILI and ILO is ±20µA.
6. The maximum value of K9MCG08U5M-Y,P’s ILI and ILO is ±80µA and the maximum value of K9MCG08U5M-I’s ILI and ILO is ±40µA.
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