K9XXG08UXM データシートの表示（PDF） - Samsung

部品番号

コンポーネント説明

メーカー

K9XXG08UXM

2G x 8 Bit / 4G x 8 Bit NAND Flash Memory

Samsung 

K9HBG08U1M

K9LAG08U0M K9MCG08U5M

Advance

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL

during power-up and power-down. A recovery time of minimum 100µs is required before internal circuit gets ready for any command

sequences as shown in Figure 16. The two step command sequence for program/erase provides additional software protection.

Figure 16. AC Waveforms for Power Transition

~ 2.5V

VCC

High

WP

WE

100µs

~ 2.5V

45

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