Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
K9MDG08U5D-P データシートの表示(PDF) - Samsung
部品番号
コンポーネント説明
メーカー
K9MDG08U5D-P
4G x 8 Bit/ 8G x 8 Bit/ 16G x 8 Bit NAND Flash Memory
Samsung
K9MDG08U5D-P Datasheet PDF : 74 Pages
First
Prev
71
72
73
74
K9HCG08U1D K9PDG08U5D
K9LBG08U0D K9MDG08U5D
Preliminary
FLASH MEMORY
WP AC Timing guide
Enabling WP during erase and program busy is prohibited. The erase and program operations are enabled and disabled as follows:
Figure B-1. Program Operation
1. Enable Mode
WE
I/O
80h
10h
WP
R/B
tww(min.100ns)
2. Disable Mode
WE
I/O
80h
10h
WP
R/B
tww(min.100ns)
Figure B-2. Erase Operation
1. Enable Mode
WE
I/O
WP
R/B
60h
tww(min.100ns)
2. Disable Mode
WE
I/O
WP
R/B
60h
tww(min.100ns)
74
D0h
D0h
Samsung Confidential
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]