MBRS320 データシートの表示（PDF） - Fairchild Semiconductor
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MBRS320 Datasheet PDF : 4 Pages
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MBRS320
SCHOTTKY POWER RECTIFIER
General Description:
Schottky Barrier Diodes make use of the rectification effect
of a metal to silicon barrier. They are ideally suited for high
frequency rectification in switching regulators & converters.
This device offers a low forward voltage performance in a
power surface mount package in applications where size and
weight are critical.
Features:
• Compact surface mount package with J-bend leads (SMC).
• 3.0 Watt Power Dissipation package.
• 3.0 Ampere, forward voltage less than 500 mv
Ordering:
• 13 inch reel (330 mm); 16 mm Tape; 3,000 units per reel.
Absolute Maximum Ratings* TA = 25OC unless otherwise noted
Parameter
Value
Storage Temperature
-65 to +150
Maximum Junction Temperature
-65 to +125
Repetitive Peak Reverse Voltage (VRRM)
20
Average Rectified Forward Current (TL = 100OC)
3.0
(TL = 90OC)
4.0
Surge Non Repetitive Forward Current
80
(Half wave, single phase, 60 Hz)
Junction to Case for Thermal Resistance (RØJL)
11
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
SMC Package
(DO-214AB)
Units
OC
OC
V
A
A
A
OC/W
Top Mark: B32
1
2
Electrical Characteristics TA = 25OC unless otherwise noted
Actual Size
SYM
CHARACTERISTICS MIN
IR Reverse Leakage Current
PW 300 us, <2% Duty Cycle
VF Forward Voltage
PW 300 us, <2% Duty Cycle
MAX
2.0
20
500
UNITS
mA
mA
mV
TEST CONDITIONS
VR = 20 V; Tj = 25OC
VR = 20 V; Tj = 100OC
IF = 3.0 A; Tj = 25OC
© 1997 Fairchild Semiconductor Corporation
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