STPS1545C データシートの表示（PDF） - STMicroelectronics
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STPS1545C Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS1545C
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
45
IF(RMS) Forward rms current
20
IF(AV) Average forward current δ = 0.5
Tc = 157 °C Per diode
7.5
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
150
IRRM Peak repetitive reverse current
tp = 2 µs square
F = 1 kHz
1
IRSM
PARM
Tstg
Tj
dV/dt
Non repetitive peak reverse current tp = 100 µs square
Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
Storage temperature range
Maximum operating junction temperature (1)
Critical rate of rise of reverse voltage
2
2700
-65 to + 175
175
10000
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Rth(j-c) Junction to case
Rth(c) Coupling
Per diode
3.0
Total
1.7
0.35
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)
Table 4.
Symbol
Static electrical characteristics (per diode)
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 125 °C
VR =VRRM
VF(1) Forward voltage drop
Tj = 125°C
Tj = 25°C
IF = 7.5A
IF = 15 A
Tj = 125 °C IF = 15 A
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.020 IF2(RMS)
-
- 100 µA
-
5
15 mA
-
0.5 0.57
-
- 0.84 V
- 0.65 0.72
2/10
Doc ID 3503 Rev 7
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