TIP42C(2009) データシートの表示（PDF） - Fairchild Semiconductor

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TIP42C
(Rev.:2009)

PNP Epitaxial Silicon Transistor

Fairchild Semiconductor 

Electrical Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

Test Condition

VCEO(sus)

* Collector-Emitter Sustaining Voltage

: TIP42

: TIP42A

: TIP42B

: TIP42C

IC = -30mA, IB = 0

ICEO

ICES

IEBO

hFE

Collector Cut-off Current

: TIP42/42A

: TIP42B/42C

Collector Cut-off Current

: TIP42

: TIP42A

: TIP42B

: TIP42C

Emitter Cut-off Current

* DC Current Gain

VCE(sat)

VBE(sat)

fT

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

* Pulse Test: PW≤300μs, Duty Cycle≤2%

VCE = -30V, IB = 0

VCE = -60V, IB = 0

VCE = -40V, VEB = 0

VCE = -60V, VEB = 0

VCE = -80V, VEB = 0

VCE = -100V, VEB = 0

VEB = -5V, IC = 0

VCE = -4V, IC = -0.3A

VCE = -4V, IC = -3A

IC = -6A, IB = -600mA

VCE = -4V, IC = -6A

VCE = -10V, IC = -500mA,

f = 1MHz

Min.

-40

-60

-80

-100

30

15

3.0

Max.

-0.7

-0.7

-400

-400

-400

-400

-1

75

-1.5

-2.0

Units

V

V

V

V

mA

mA

μA

μA

μA

μA

mA

V

V

MHz

© 2009 Fairchild Semiconductor Corporation

TIP42/TIP42A/TIP42B/TIP42C Rev. B0

2

www.fairchildsemi.com

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