28C011TRPFB12 データシートの表示（PDF） - MAXWELL TECHNOLOGIES

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28C011TRPFB12

1 Megabit (128K x 8-Bit) EEPROM

MAXWELL TECHNOLOGIES 

1 Megabit (128K x 8-Bit) EEPROM

28C011T

WE, CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of

WE or CE.

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a

write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-

forming a write operation.

RDY/Busy Signal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal

has high impedance except in write cycle and is lowered to VOL after the first write signal. At the-end of a write cycle,

the RDY/Busy signal changes state to high impedance.

RES Signal

When RES is LOW, the EEPROM cannot be read and programmed. Therefore, data can be protected by keeping

RES low when VCC is switched. RES should be high during read and programming because it doesn’t provide a latch

function.

Data Protection

To protect the data during operation and power on/off, the EEPROM has the internal functions described below.

1. Data Protection against Noise of Control Pins (CE, OE, WE) during Operation.

11.10.03 REV 10

All data sheets are subject to change without notice 13

©2003 Maxwell Technologies

All rights reserved.

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