2N7002S データシートの表示（PDF） - Unspecified

部品番号

コンポーネント説明

メーカー

2N7002S

SURFACE MOUNT Dual N-Channel Enhancement MOS FET

Unspecified 

RATING CHARACTERISTIC CURVES ( 2N7002S )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

VGS = 0 V, ID = 10 µA

VDS = 60 V, VGS = 0 V

IGSSF

IGSSR

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

VGS = 15 V, VDS = 0 V

VGS = -15 V, VDS = 0 V

Min Typ Max Units

60 70

V

1

µA

TC=125°C

0.5 mA

10

nA

-10 nA

ON CHARACTERISTICS (Note 1)

VGS(th)

RDS(ON)

VDS(ON)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

Static Drain-Source On-Resistance VGS = 10 V, ID = 250 mA

VGS = 4.0 V, ID = 100 mA

Drain-Source On-Voltage

VGS = 10 V, ID = 500mA

VGS = 5.0 V, ID = 50 mA

ID(ON)

gFS

On-State Drain Current

Forward Transconductance

VGS = 10 V, VDS = 7.5VDS(on)

VGS = 4.5V, VDS = 10VDS(on)

VDS = 15 V , DS(on) ID = 200 m A

1

2.0 2.5

V

1.7 3.0 Ω

2.5 4.0

0.6 3.75 V

0.09 1.5

800 1300

mA

500 700

250

mS

DYNAMIC CHARACTERISTICS

Qg

Total Gate Charge

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

ton

Turn-On Time

tr

toff

Turn-Off Time

tf

VDS = 30 V, VGS = 10 V,

I D= 250 mA

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

VDD = 30 V, RL = 200 Ω,

ID = 100 mA, VGS = 10 V,

RGEN = 10 Ω

VDD = 30 V, RL = 200 Ω,

ID = 100 mA, VGS = 10 V,

RGEN = 10 Ω

0.6 1.0 nC

0.06 25

0.06 5

25 50

pF

6 25

1.2 5

7.5 20

nS

6

7.5 20

nS

3

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Maximum Continuous Drain-Source Diode Forward Current

ISM

Maximum Pulsed Drain-Source Diode Forward Current

VSD

Drain-Source Diode Forward

VGS = 0 V, IS = 200 mA (Note 1)

Voltage

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

115 mA

0.8 A

0.85 1.2 V

Share Link: