AS58C1001DG(2008) データシートの表示（PDF） - Austin Semiconductor

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AS58C1001DG
(Rev.:2008)

128K x 8 EEPROM EEPROM Memory

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS58C1001

PAGE WRITE TIMING WAVEFORM

(WE\ CONTROLLED)

A7 - A16

A0 - A6

WE\

tAS

tAH

tWP tDL

tBL

tCS

CE\

11111112222112222233333t3333CH444111114222221111333332222 11111222211211tB233333222LC3333444411111111122222222233333 1111122222111122223333444411111222221111333332222

tWC

tOES

tOEH

OE\

tDH

tDS

DIN

RDY/Busy\ High-Z

tDB

tRP

RES\

tRES

VCC

In transition from HI to LOW or LOW to HI.

tDW

High-Z

AS58C1001

Rev. 5.5 12/08

11

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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