BSP 280
Electrical Characteristics
at Tj = 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
Values
Unit
typ.
max.
Static Characteristics
Collector-emitter breakdown voltage
VGE = 0, IC = 0.1 mA
Gate threshold voltage
VGE = VCE, IC = 0.1 mA
Collector-emitter saturation voltage
VGE = 15 V, IC = 0.5 A
Tj = 25 ˚C
Tj = 125 ˚C
Tj = 150 ˚C
VGE = 15 V, IC = 1.5 A
Tj = 25 ˚C
Tj = 125 ˚C
Tj = 150 ˚C
Zero gate voltage collector current
VCE = 1000 V, VGE = 0
Tj = 25 ˚C
Tj = 125 ˚C
Gate-emitter leakage current
VGE = 20 V, VCE = 0
V(BR)CES
1000 –
VGE(th)
4.5
5.5
VCE(sat)
–
1.8
–
2.1
–
2.2
–
2.8
–
3.8
–
4.0
ICES
–
1
–
–
IGES
–
0.1
V
–
6.5
–
–
3.0
3.3
4.3
4.5
µA
25
100
nA
100
Dynamic Characteristics
Forward transconductance
VCE = 20 V, IC = 1.5 A
gfs
S
–
0.6
–
Input capacitance
VCE = 0, VGE = 25 V, f = 1 MHz
Ciss
pF
–
225
–
Output capacitance
VCE = 0, VGE = 25 V, f = 1 MHz
Coss
–
25
–
Reverse transfer capacitance
VCE = 0, VGE = 25 V, f = 1 MHz
Crss
–
13
–
Turn-on delay time
td(on)
ns
VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A
–
20
–
Rise time
tr
VCC = 600 V, VGE = 15 V, RG(on) = 25 Ω, IC = 1.5 A
–
15
–