BSR12 データシートの表示（PDF） - NXP Semiconductors.

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BSR12

PNP switching transistor

NXP Semiconductors. 

Philips Semiconductors

PNP switching transistor

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

Ptot

Tstg

Tj

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

collector current (DC)

peak collector current

total power dissipation

storage temperature

junction temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C

THERMAL CHARACTERISTICS

SYMBOL

Rth j-a

PARAMETER

thermal resistance from junction to

ambient

CONDITIONS

note 1

Note

1. Transistor mounted on a ceramic substrate 8 × 10 × 0.7 mm.

Product specification

BSR12

MIN.

−

−

−

−

−

−

−65

−

MAX.

−15

−15

−3

−100

−200

250

+150

150

UNIT

V

V

V

mA

mA

mW

°C

°C

VALUE

500

UNIT

K/W

1999 Jul 23

3

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