BXY42-T1 データシートの表示（PDF） - Infineon Technologies

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BXY42-T1

HiRel Silicon PIN Diode

Infineon Technologies 

BXY42

Maximum Ratings

Parameter

Symbol

Values

Unit

Reverse Voltage

VR

Peak Forward Current 1)

IFM

50

V

5

A

Power Dissipation

BXY42-T 2)

Ptot

mW

600

BXY42-T1 3)

350

Operating Temperature Range

Top

-55 to +175

°C

Storage Temperature Range

Tstg

-65 to +175

°C

Soldering Temperature 4)

Tsol

+250

°C

Junction Temperature

Tj

175

°C

Thermal Resistance Junction-Case

BXY42-T

BXY42-T1

Rth(j-c)

K/W

200

350

Notes.:

1.) At tp = 1,0µs, Duty Cycle=0,001%

2.) At TCASE = 55 °C. For TCASE > 55 °C derating is required.

3.) At TCASE = 52,5 °C. For TCASE > 52,5 °C derating is required.

4.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have

elapsed.

Electrical Characteristics

at TA=25°C; unless otherwise specified

Parameter

DC Characteristics

Reverse Current 1

VR1=50V

Reverse Current 2

VR2=40V

Forward Voltage

IF=100mA

Symbol

Values

Unit

min. typ.

max.

IR1

-

-

10 µA

IR2

-

-

5

nA

VF

-

0,97

1,1 V

IFAG IMM RPD D HIR

2 of 5

V2, February 2011

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