CY7C1049DV33-10VXI データシートの表示（PDF） - Cypress Semiconductor
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CY7C1049DV33-10VXI Datasheet PDF : 14 Pages
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CY7C1049DV33
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply Voltage on
VCC to Relative GND[2] ................................–0.3 V to +4.6 V
DC Voltage Applied to Outputs
in High Z State[2] ................................. –0.3 V to VCC + 0.3 V
DC Input Voltage[2] ............................. –0.3 V to VCC + 0.3 V
Electrical Characteristics
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Range
Industrial
Automotive
Ambient
Temperature
VCC
–40 C to +85 C 3.3 V 0.3 V
–40 C to +125 C 3.3 V 0.3 V
Speed
10 ns
12 ns
Over the Operating Range
Parameter
Description
Test Conditions
VOH
VOL
VIH[2]
VIL[2]
IIX
IOZ
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage[2]
VCC = Min, IOH = –4.0 mA
VCC = Min, IOL = 8.0 mA
Input Leakage Current GND < VI < VCC
Output Leakage Current GND < VOUT < VCC,
Output Disabled
ICC
VCC Operating Supply VCC = Max,
100 MHz
Current
f = fMAX = 1/tRC
83 MHz
66 MHz
40 MHz
ISB1
Automatic CE
Max VCC, CE > VIH; VIN > VIH or
Power down Current VIN < VIL, f = fMAX
—TTL Inputs
ISB2
Automatic CE
Max VCC, CE > VCC – 0.3 V,
Power down Current VIN > VCC – 0.3 V, or VIN < 0.3 V,
—CMOS Inputs
f=0
-10 (Industrial)
Min
Max
2.4
–
–
0.4
2.0
–0.3
VCC + 0.3
0.8
–1
+1
–1
+1
–
90
–
80
–
70
–
60
–
20
–
10
-12 (Automotive)
Min
Max Unit
2.4
–
V
–
0.4
V
2.0
–0.3
VCC + 0.3 V
0.8
V
–1
+1
A
–1
+1
A
–
–
mA
–
95
mA
–
85
mA
–
75
mA
–
25
mA
–
15
mA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
CIN
COUT
Input Capacitance
IO Capacitance
Test Conditions
TA = 25 C, f = 1 MHz, VCC = 3.3 V
Max Unit
8
pF
8
pF
Note
2. VIL (min.) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns.
Document Number: 38-05475 Rev. *G
Page 4 of 14
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