DSF8035SK データシートの表示（PDF） - Dynex Semiconductor

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DSF8035SK

Fast Recovery Diode

Dynex Semiconductor 

DSF8035SK

SURGE RATINGS

Symbol

Parameter

I

Surge (non-repetitive) forward current

FSM

I2t

I2t for fusing

IFSM

Surge (non-repetitive) forward current

I2t

I2t for fusing

Conditions

10ms half sine; with 0% VRRM, Tj = 150oC

10ms half sine; with 50% VRRM, Tj = 150oC

Max. Units

3.0

kA

45 x 103 A2s

2.4

kA

28.8 x 103 A2s

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Rth(j-c) Thermal resistance - junction to case

Rth(c-h) Thermal resistance - case to heatsink

Tvj

Virtual junction temperature

Tstg

Storage temperature range

-

Clamping force

Conditions

Double side cooled

dc

Single side cooled

Anode dc

Cathode dc

Clamping force 8.0kN

with mounting compound

Double side

Single side

Forward (conducting)

Min. Max. Units

- 0.048 oC/W

- 0.090 oC/W

- 0.103 oC/W

-

0.01 oC/W

-

0.02 oC/W

-

150

oC

-55 175

oC

7.0 9.0 kN

CHARACTERISTICS

Symbol

Parameter

VFM

IRRM

trr

Q

RA1

I

RM

K

Forward voltage

Peak reverse current

Reverse recovery time

Recovered charge (50% chord)

Reverse recovery current

Soft factor

V

TO

rT

V

FRM

Threshold voltage

Slope resistance

Forward recovery voltage

Conditions

At 400A peak, Tcase = 25oC

At VRRM, Tcase = 150oC

I

F

=

1000A,

di /dt

RR

=

100A/µs

T = 150oC, V = 100V

case

R

At Tvj = 150oC

At Tvj = 150oC

di/dt

=

1000A/µs,

T

j

=

125oC

Typ. Max. Units

-

3.5

V

-

50 mA

-

4.0 µs

-

400 µC

-

220

A

1.4

-

-

-

1.8

V

-

3.7 mΩ

-

140

V

2/8

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