GT28F400B3B150 データシートの表示（PDF） - Intel

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GT28F400B3B150

SMART 3 ADVANCED BOOT BLOCK WORD-WIDE 4-MBIT (256K X 16), 8-MBIT (512K X 16), 16-MBIT (1024K X 16) FLASH MEMORY FAMILY

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SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE

E

Table 17. Erase and Program Timings

Sym

Parameter

Notes

VPP = 2.7V

Typ1

Max3

tBWPB

Block Program Time

(Parameter)

2

0.10

0.30

tBWMB

tWHQV1

tEHQV1

Block Program Time (Main)

Program Time

2

0.80

2.40

2

22

200

tWHQV2 Block Erase Time (Parameter)

2

tEHQV2

tWHQV3 Block Erase Time (Main)

2

tEHQV3

tWHRH1 Program Suspend Latency

3

tEHRH1

1

5.0

1.8

8.0

5

10

tWHRH2 Erase Suspend Latency

tEHRH2

3

5

20

NOTES:

1. Typical values measured at TA = +25°C and nominal voltages.

2. Excludes external system-level overhead.

3. Sampled, but not 100% tested.

VPP = 12V

Typ1

Max3

0.03

0.10

0.24

0.80

8

185

0.8

4.8

1.1

7.0

5

10

6

12

Unit

sec

sec

µs

sec

sec

µs

µs

44

PRELIMINARY

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