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K4E660412D データシートの表示(PDF) - Samsung
部品番号
コンポーネント説明
メーカー
K4E660412D
16M x 4bit CMOS Dynamic RAM with Extended Data Out
Samsung
K4E660412D Datasheet PDF : 21 Pages
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K4E660412D,K4E640412D
HIDDEN REFRESH CYCLE ( READ )
CMOS DRAM
V
IH
-
RAS
V
IL
-
V
IH
-
CAS
V
IL
-
V
IH
-
A
V
IL
-
V
IH
-
W
V
IL
-
V
IH
-
OE
V
IL
-
DQ0 ~ DQ3(7)
V
OH
-
V
OL
-
t
RC
t
RAS
t
RP
t
RC
t
RP
t
RAS
t
CRP
t
RCD
t
RSH
t
ASR
t
RAD
t
RAH
t
ASC
ROW
ADDRESS
t
RAL
t
CAH
COLUMN
ADDRESS
t
RCS
t
CHR
t
WRH
t
AA
t
OEA
OPEN
t
CLZ
t
RAC
t
OLZ
t
CAC
t
REZ
t
WEZ
t
OEZ
DATA-OUT
t
CEZ
Don
′
t care
Undefined
* In Hidden refresh cycle of 64Mb A-dile & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
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