Dual-/Triple-Voltage, Power-Supply
Sequencers/Supervisors
Applications Information
MOSFET Selection
The external pass MOSFET is connected in series with
the sequenced power-supply source. Since the load
current and the MOSFET drain-to-source impedance
(RDS) determine the voltage drop, the on characteris-
tics of the MOSFET affect the load supply accuracy.
The MAX6880–MAX6883 fully enhance the external
MOSFET out of its linear range to ensure the lowest
drain-to-source on-impedance. For highest supply
accuracy/lowest voltage drop, select a MOSFET with
an appropriate drain-to-source on-impedance with a
gate-to-source bias of 4.5V to 6.0V.
Layout and Bypassing
For better noise immunity, bypass each of the IN_
inputs to GND with 0.1µF capacitors installed as close
to the device as possible. Bypass ABP to GND with a
1µF capacitor installed as close to the device as possi-
ble. ABP is an internally generated voltage and must
not be used to supply power to external circuitry.
PART
MAX6880
MAX6881
MAX6882
MAX6883
CHANNEL
3
3
2
2
TIMEOUT
SELECTABLE
Yes
No
Yes
No
PG/RST
Yes
No
Yes
No
Selector Guide
MARGIN
Yes
No
Yes
No
PG THRESHOLD
VOLTAGE (%)
92.5
—
92.5
—
PROCESS: BiCMOS
Chip Information
______________________________________________________________________________________ 15