MC33910BACR2 データシートの表示（PDF） - Freescale Semiconductor

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MC33910BACR2

LIN System Basis Chip with High Side Drivers

Freescale Semiconductor 

MC33910G5AC/MC3433910G5AC

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

Table 5. Dynamic Electrical Characteristics (continued)

Characteristics noted under conditions 5.5 V ≤ VSUP ≤ 18 V, -40°C ≤ TA ≤ 125°C for the 33910 and -40°C ≤ TA ≤ 85°C for the

34910, unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal

conditions, unless otherwise noted.

Characteristic

Symbol

Min

Typ

Max

Unit

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0KBIT/SEC ACCORDING TO LIN PHYSICAL

LAYER SPECIFICATION(48), (49)

Duty Cycle 1:

THREC(MAX) = 0.744 * VSUP

THDOM(MAX) = 0.581 * VSUP

D1 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 50 µs, 7.0 V ≤ VSUP ≤ 18 V

D1

0.396

—

—

Duty Cycle 2:

THREC(MIN) = 0.422 * VSUP

THDOM(MIN) = 0.284 * VSUP

D2 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 50 µs, 7.6 V ≤ VSUP ≤ 18 V

D2

—

—

0.581

LIN PHYSICAL LAYER: DRIVER CHARACTERISTICS FOR SLOW SLEW RATE - 10.4KBIT/SEC ACCORDING TO LIN PHYSICAL LAYER

SPECIFICATION(48), (50)

Duty Cycle 3:

THREC(MAX) = 0.778 * VSUP

THDOM(MAX) = 0.616 * VSUP

D3 = tBUS_REC(MIN)/(2 x tBIT), tBIT = 96 µs, 7.0 V ≤ VSUP ≤ 18 V

D3

0.417

—

—

Duty Cycle 4:

THREC(MIN) = 0.389 * VSUP

THDOM(MIN) = 0.251 * VSUP

D4 = tBUS_REC(MAX)/(2 x tBIT), tBIT = 96 µs, 7.6 V ≤ VSUP ≤ 18 V

D4

—

—

0.590

Notes

48. Bus load RBUS and CBUS 1.0 nF / 1.0 kΩ, 6.8 nF / 660 Ω, 10 nF / 500 Ω. Measurement thresholds: 50% of TXD signal to LIN signal

threshold defined at each parameter. See Figure 6.

49. See Figure 7.

50. See Figure 8.

33910

18

Analog Integrated Circuit Device Data

Freescale Semiconductor

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