MMSF3P03HD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)(1)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
—
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
IDSS
—
—
IGSS
—
VGS(th)
1.0
—
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 3.0 Adc)
(VGS = 4.5 Vdc, ID = 1.5 Adc)
RDS(on)
—
—
Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)
gFS
3.0
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS(3)
(VDS = 24 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
—
Coss
—
Crss
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
(VDS = 15 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(on)
—
tr
—
td(off)
—
tf
—
Gate Charge
QT
—
(VDS = 24 Vdc, ID = 3.0 Adc,
VGS = 10 Vdc)
Q1
—
Q2
—
Q3
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage(1)
(IS = 3.0 Adc, VGS = 0 Vdc)
(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
—
—
Reverse Recovery Time
trr
—
(IS = 3.0 Adc,
dIS/dt = 100 A/µs)
ta
—
tb
—
Reverse Recovery Stored Charge
QRR
—
(1) Negative sign for P–Channel device omitted for clarity.
(2) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(3) Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
Vdc
—
—
30
—
mV/°C
µAdc
—
1.0
—
10
5.0
100
nAdc
1.5
3.9
0.080
0.090
5.0
2.0
—
0.100
0.110
—
Vdc
mV/°C
Ohm
mhos
1015
1420
pF
470
660
135
190
26
52
ns
102
204
67
134
69
138
14
28
32
64
104
208
66
132
32.4
45
nC
2.7
—
9.0
—
6.9
—
Vdc
1.3
2.0
0.85
—
31
—
ns
22
—
9.0
—
0.034
—
µC
2
Motorola TMOS Power MOSFET Transistor Device Data