MSA-0800-GP4 データシートの表示（PDF） - HP => Agilent Technologies
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MSA-0800-GP4 Datasheet PDF : 4 Pages
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MSA-0800 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
Power Dissipation[2,3]
750 mW
RF Input Power
+13 dBm
Junction Temperature
200°C
Storage Temperature
200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 14.3 mW/°C for TMounting␣ Surface > 148°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
Thermal Resistance[2,4]:
θjc = 70°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 36 mA, ZO = 50 Ω
GP
Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
VSWR
Input VSWR
Output VSWR
f = 1.0 to 3.0 GHz
f = 1.0 to 3.0 GHz
NF
50 Ω Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3
Third Order Intercept Point
f = 1.0 GHz
tD
Group Delay
f = 1.0 GHz
Vd
Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
dBm
dBm
psec
V
7.0
mV/°C
Typ. Max.
32.5
23.5
11.0
2.0:1
1.9:1
3.0
12.5
27.0
125
7.8 8.4
–17.0
Notes:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0800-GP4
100
6-411
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