MX29F400T データシートの表示（PDF） - Macronix International

部品番号

コンポーネント説明

メーカー

MX29F400T

4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY

Macronix International 

READ TIMING WAVEFORMS

VIH

Addresses

VIL

VIH

CE

VIL

WE

VIH

VIL

OE

VIH

VIL

Outputs

VOH HIGH Z

VOL

MX29F400T/B

ADD Valid

tCE

tOE

tACC

tDF

tOH

DATA Valid

HIGH Z

COMMAND PROGRAMMING/DATA PROGRAMMING/ERASE OPERATION

DC CHARACTERISTICS TA = 0oC to 70oC, -40oC to 125oC, VCC = 5V ± 10%

SYMBOL

PARAMETER

MIN. TYP MAX. UNIT CONDITIONS

ICC1 (Read) Operating VCC Current

40 mA IOUT=0mA, f=5MHz

ICC2

50 mA IOUT=0mA, F=10MHz

ICC3 (Program)

50 mA In Programming

ICC4 (Erase)

50 mA In Erase

ICCES

VCC Erase Suspend Current

2

mA CE=VIH, Erase Suspended

NOTES:

1. VIL min. = -0.6V for pulse width is equal to or less

than 20ns.

2. If VIH is over the specified maximum value, program-

ming operation cannot be guranteed.

3. ICCES is specified with the device de-selected. If

the device is read during erase suspend mode, cur-

rent draw is the sum of ICCES and ICC1 or ICC2.

4. All current are in RMS unless otherwise noted.

P/N:PM0439

REV. 1.6, NOV. 12, 2001

19

Share Link: