SPI21N50C3 データシートの表示（PDF） - Infineon Technologies

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SPI21N50C3

Cool MOS™ Power Transistor

Infineon Technologies 

Final data

SPP21N50C3, SPB21N50C3

SPI21N50C3, SPA21N50C3

Maximum Ratings

Parameter

Drain Source voltage slope

VDS = 400 V, ID = 21 A, Tj = 125 °C

Thermal Characteristics

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - case, FullPAK

Thermal resistance, junction - ambient, leaded

Thermal resistance, junction - ambient, FullPAK

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s 4)

Symbol

dv/dt

Value

50

Unit

V/ns

Symbol

RthJC

RthJC_FP

RthJA

RthJA_FP

RthJA

Tsold

Values

Unit

min. typ. max.

-

-

0.6 K/W

-

-

3.6

-

-

62

-

-

80

-

-

62

-

35

-

-

- 260 °C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 500

-

Drain-Source avalanche

V(BR)DS VGS=0V, ID=21A

- 600

breakdown voltage

-V

-

Gate threshold voltage

Zero gate voltage drain current

VGS(th)

IDSS

ID=1000µA, VGS=VDS 2.1

VDS=500V, VGS=0V,

Tj=25°C

-

Tj=150°C

-

3

3.9

µA

0.1 1

- 100

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

- 100 nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=13.1A

Ω

Tj=25°C

- 0.16 0.19

Tj=150°C

- 0.54 -

Gate input resistance

RG

f=1MHz, open drain

-

0.53

-

Page 2

2003-07-02

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