SPI11N65C3 データシートの表示（PDF） - Infineon Technologies

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SPI11N65C3

Cool MOS™ Power Transistor

Infineon Technologies 

17 Typ. switching losses

E = f (ID), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V, RG=6.8Ω

0.04

*) Eon includes SPD06S60 diode

mWs

commutation losses

0.03

0.025

0.02

0.015

0.01

0.005

0

0

Eon*

Eoff

2

4

6

19 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

4

A

8

A

12

ID

SPP11N65C3,SPA11N65C3

SPI11N65C3

18 Typ. switching losses

E = f(RG), inductive load, Tj=125°C

par.: VDS=380V, VGS=0/+13V,ID=11A

0.24

*) Eon includes SPD06S60 diode

commutation losses

mWs

0.16

Eoff

0.12

0.08

0.04

Eon*

0

0 10 20 30 40 50 Ω 70

RG

20 Avalanche energy

EAS = f (Tj)

par.: ID = 2.5 A, VDD = 50 V

350

mJ

3

Tj(Start)=25°C

250

2.5

200

2

Tj(Start)=125°C

150

1.5

100

1

0.5

50

0 -3

-2

-1

0

1

2

10 10 10 10 10 10

Rev. 2.91

µs

4

10

tAR

Page 9

0

20 40 60 80 100 120 °C 160

Tj

2009-11-30

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