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28F016XS データシートの表示(PDF) - Intel
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コンポーネント説明
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28F016XS
16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
Intel
28F016XS Datasheet PDF : 54 Pages
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E
28F016XS FLASH MEMORY
5.4 DC Characteristics
V
CC
= 3.3V ± 5%, T
A
= 0°C to +70°C
3/5# = Pin Set High for 3.3V Operations
Symbol
Parameter
Notes Min Typ Max Units
Test Conditions
I
LI
Input Load Current
1
I
LO
Output Leakage
1
Current
I
CCS
V
CC
Standby
1,5
Current
±
1
µA V
CC
= V
CC
Max
V
IN
= V
CC
or GND
±
10 µA V
CC
= V
CC
Max
V
OUT
= V
CC
or GND
70 130 µA V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# = V
CC
±
0.2V
BYTE#, WP#, 3/5# = V
CC
±
0.2V or GND ± 0.2V
I
CCD
V
CC
Deep
1
Power-Down
Current
1
4
mA V
CC
= V
CC
Max
CE
0
#, CE
1
#, RP# = V
IH
BYTE#, WP#, 3/5# = V
IH
or
V
IL
2
5
µA RP# = GND
±
0.2V
BYTE# = V
CC
± 0.2V or
GND ± 0.2V
I
CCR1
V
CC
Word/Byte
Read Current
1,4,5
I
CCR2
V
CC
Word/Byte
1,4,
Read Current
5,6
65
85
mA V
CC
= V
CC
Max
CMOS: CE
0
# ,CE
1
# = GND
± 0.2V, BYTE# = GND ±
0.2V or V
CC
± 0.2V,
Inputs = GND ± 0.2V or
V
CC
± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 25 MHz, I
OUT
= 0 mA
60
75
mA V
CC
= V
CC
Max
CMOS: CE
0
#, CE
1
# = GND
± 0.2V, BYTE# = GND ±
0.2V or V
CC
± 0.2V,
Inputs = GND ± 0.2V or
V
CC
± 0.2V
4-Location Access
Sequence: 3-1-1-1
(clocks)
f = 16 MHz, I
OUT
= 0 mA
27
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