UT2306
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±8
V
Continuous Drain Current
ID
3.5
A
Pulsed Drain Current (Note 1, 2)
IDM
14
A
Power Dissipation
Junction Temperature
PD
0.83
W
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
150
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
UNIT
°C/W
PARAMETER
SYMBOL
TEST CONDITIONS MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250μA
30
Drain-Source Leakage Current
IDSS
VDS=24V, VGS=0V
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250μA
1
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=10V, ID=3.5A
VGS=5V, ID=2.8A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
VDS=25V,VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
Turn-OFF Delay Time
tR
tD(OFF)
VDD=15V, VGS=10V, ID=1A,
RG=6Ω, RL=15Ω
Turn-OFF Fall Time
tF
Total Gate Charge
QG
Gate-Source Charge
QGS
VDS=15V, VGS=10V, ID=3.5A
Gate-Drain Charge
QGD
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note2)
VSD
VGS=0V, IS=1.25A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Note:1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.
3. Surface mounted on FR4 board t≦10sec.
TYP
1.5
42
70
400
80
45
10
8
19
6.2
12.5
2.4
1.3
0.8
MAX
1
±100
2
65
90
19
15
35
12
16
1.3
1.3
UNIT
V
μA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-130.D