UT2306L-AE2-R データシートの表示（PDF） - Unisonic Technologies

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UT2306L-AE2-R

N-CHANNEL ENHANCEMENT MODE

Unisonic Technologies 

UT2306

„ TYPICAL CHARACTERISTICS

Power MOSFET

Drain-Source On Resistance

120

100

80

VGS=5V

60

VGS=10V

40

20

0

0

2

4

6

8

10

Drain Current,ID (A)

Drain-Source On Resistance

2.0

VGS=10V

1.8 IDS=3.5A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

RON@TJ=25℃:42mΩ

0.2

-50 -25 0 25 50 75 100 125 150

Junction Temperature,TJ (℃)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

Gate Threshold Voltage

1.6

IDS=250μA

1.4

1.2

1.0

0.8

0.6

0.4

0.2

-50 -25 0 25 50 75 100 125 150

Junction Temperature,TJ (℃)

Source-Drain Diode Forward

20

10

TJ=150℃

TJ=25℃

1

0.0 0.4 0.8 1.2 1.6 2.0

Source-Drain Voltage,VSD (V)

3 of 5

QW-R502-130.D

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