UT2306
TYPICAL CHARACTERISTICS(Cont.)
Power MOSFET
Capacitance
600
Frequency=1MHZ
500
CISS
400
300
200
COSS
100
CRSS
0
0
5 10 15 20 25 30
Drain-Source Voltage,VDS (V)
Safe Operation Area
50
10
Limit
R DS(ON)
1
300μs
1ms
10ms
100ms
0.1
1s
TA=25℃
DC
0.01
0.01
0.1
1
10
100
Drain-Source Voltage,VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge
10
VDS=15V
ID=3.5A
8
6
4
2
0
0 2 4 6 8 10 12 14
Gate Charge,QG (nC)
Thermal Transient Impedance
2
1
Duty=0.5
0.1
0.01
0.2
0.1
0.05
0.02
0.01
Single Pulse
1E-3
1E-4 1E-3
Mounted on 1in 2 pad
RθJA: 150℃/W
0.01 0.1 1 10 100
Square Wave Pulse Duration (sec)
4 of 5
QW-R502-130.D