4510UUUU データシートの表示（PDF） - NXP Semiconductors.
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4510UUUU Datasheet PDF : 13 Pages
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NXP Semiconductors
PMEG45U10EPD
45 V, 10 A extremely low VF MEGA Schottky barrier rectifier
Symbol
Tstg
Parameter
storage temperature
Conditions
Min Max Unit
-65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
9. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Rth(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] -
-
90
K/W
[1][3] -
-
70
K/W
[1][4] -
-
40
K/W
[5]
-
-
3
K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[5] Soldering point of cathode tab.
102
Zth(j-a)
(K/W)
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
0.1
0.05
0.02
1 0.01
aaa-014542
0
10-1
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 1. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG45U10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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