2SB1025DJTL-E データシートの表示（PDF） - Renesas Electronics

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2SB1025DJTL-E

Silicon PNP Epitaxial

Renesas Electronics 

2SB1025

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

–120

—

—

V IC = –10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO –80

—

—

V IC = –1 mA, RBE = ∞

Emitter to base breakdown voltage

V(BR)EBO

–5

—

—

V IE = –10 µA, IC = 0

Collector cutoff current

ICBO

—

—

–10

µA VCB = –100 V, IE = 0

DC current transfer ratio

hFE1

100

—

200

VCE = –5 V, IC = –150 mA

hFE2

30

—

—

VCE = –5 V,

IC = –500 mA (Pulse test)

Collector to emitter saturation voltage

VCE(sat)

—

—

–1

V IC = –500 mA,

IB = –50 mA (Pulse test)

Base to emitter voltage

VBE

—

—

–0.9

V VCE = –5 V, IC = –150 mA

Gain bandwidth product

fT

—

140

—

MHz VCE = –5 V, IC = –150 mA

Collector output capacitance

Cob

—

20

—

pF VCB = –10 V, IE = 0,

f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 5

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