BTS728L2 データシートの表示（PDF） - Infineon Technologies
部品番号
コンポーネント説明
メーカー
BTS728L2 Datasheet PDF : 14 Pages
| |||
BTS 728 L2
Electrical Characteristics
Parameter and Conditions, each of the two channels Symbol
at Tj = -40...+150°C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Vbb to OUT); IL = 2 A, Vbb ≥ 7V
each channel, Tj = 25°C: RON
Tj = 150°C:
two parallel channels, Tj = 25°C:
see diagram, page 10
Nominal load current
one channel active: IL(NOM)
two parallel channels active:
Device on PCB6), Ta = 85°C, Tj ≤ 150°C
Output current while GND disconnected or pulled up7); IL(GNDhigh)
Vbb = 30 V, VIN = 0, see diagram page 8
Turn-on time8)
IN
to 90% VOUT: ton
Turn-off time
IN
to 10% VOUT: toff
RL = 12 Ω
Slew rate on 8)
10 to 30% VOUT, RL = 12 Ω
Tj = -40°C: dV/dton
Tj = 25°C...150°C:
Slew rate off 8)
70 to 40% VOUT, RL = 12 Ω
Tj = -40°C: -dV/dtoff
Tj = 25°C...150°C:
Operating Parameters
Operating voltage
Tj=-40
Overvoltage protection9)
Tj=25...150°C:
Tj =-40°C:
I bb = 40 mA
Standby current10)
Tj =25...150°C:
Tj =-40°C...25°C:
VIN = 0; see diagram page 10
Tj =150°C:
Leakage output current (included in Ibb(off))
VIN = 0
Operating current 11), VIN = 5V,
IGND = IGND1 + IGND2,
one channel on:
two channels on:
Vbb(on)
Vbb(AZ)
Ibb(off)
IL(off)
IGND
Values
Unit
min typ Max
-- 50 60 mΩ
100 120
25 30
3.6 4.0
5.5 6.0
-- A
--
--
2 mA
30 100 200 µs
30 100 200
0.15
0.15
0.15
0.15
--
1 V/µs
-- 0.8
--
1 V/µs
-- 0.8
4.75
-- 41 V
-- 43
41
--
-- V
43 47 52
-- 10 18 µA
--
-- 50
--
1 10 µA
-- 0.8 1.5 mA
-- 1.6 3.0
6) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 14
7) not subject to production test, specified by design
8) See timing diagram on page 11.
9) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150Ω
resistor for the GND connection is recommended). See also VON(CL) in table of protection functions and
circuit diagram on page 8.
10) Measured with load; for the whole device; all channels off
11) Add IST, if IST > 0
Semiconductor Group
4
2003-Oct-01
Share Link: 