FDD3510H データシートの表示（PDF） - Fairchild Semiconductor

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FDD3510H

Dual N & P-Channel PowerTrench® MOSFET

Fairchild Semiconductor 

Electrical Characteristics TJ = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Type Min Typ Max Units

Drain-Source Diode Characteristics

VSD

Source to Drain Diode

Forward Voltage

VGS = 0V, IS = 2.6A

VGS = 0V, IS = -2.6A

(Note 2) Q1

(Note 2) Q2

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Q1

Q1

IF = 4.3A, di/dt = 100A/s

Q2

Q2

Q1

IF = -2.8A, di/dt = 100A/s

Q2

0.8 1.2

-0.8 -1.2

V

29 46

30 48

ns

28 45

30 48

nC

Notes:

1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined

by the user's board design.

Q1

a. 40°C/W when mounted on

a 1 in2 pad of 2 oz copper

b. 96°C/W when mounted on a

minimum pad of 2 oz copper

Scale 1 : 1 on letter size paper

a. 40°C/W when mounted on

Q2

a 1 in2 pad of 2 oz copper

b. 96°C/W when mounted on a

minimum pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.

3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V.

FDD3510H Rev.C

3

www.fairchildsemi.com

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