K9F4G08U0M データシートの表示（PDF） - Samsung
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K9F4G08U0M Datasheet PDF : 41 Pages
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K9K8G08U1M
K9F4G08U0M
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FLASH MEMORY
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command
sequences as shown in Figure 21. The two step command sequence for program/erase provides additional software protection.
Figure 21. AC Waveforms for Power Transition
3.3V device : ~ 2.5V
VCC
High
WP
WE
10µs
3.3V device : ~ 2.5V
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