M28W320ECT70N1F データシートの表示（PDF） - STMicroelectronics

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M28W320ECT70N1F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M28W320ECT, M28W320ECB

Table 8. Program, Erase Times and Program/Erase Endurance Cycles

Parameter

Test Conditions

M28W320EC

Min

Typ

Max

Unit

Word Program

VPP = VDD

10

200

µs

Double Word Program

VPP = 12V ±5%

10

200

µs

Quadruple Word Program

VPP = 12V ±5%

10

200

µs

Main Block Program

VPP = 12V ±5%

VPP = VDD

0.16/0.08 (1)

5

s

0.32

5

s

Parameter Block Program

VPP = 12V ±5%

VPP = VDD

0.02/0.01 (1)

4

s

0.04

4

s

Main Block Erase

VPP = 12V ±5%

VPP = VDD

1

10

s

1

10

s

Parameter Block Erase

VPP = 12V ±5%

VPP = VDD

0.4

10

s

0.4

10

s

Program/Erase Cycles (per Block)

100,000

cycles

Data Retention

20

years

Note: 1. Typical time to program a Main or Parameter Block using the Double Word Program and the Quadruple Word Program commands

respectively.

16/53

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