M28W320ECT70N1F データシートの表示（PDF） - STMicroelectronics

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M28W320ECT70N1F

32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M28W320ECT, M28W320ECB

Table 15. DC Characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max Unit

ILI Input Leakage Current

ILO Output Leakage Current

0V≤ VIN ≤ VDDQ

0V≤ VOUT ≤VDDQ

±1

µA

±10

µA

IDD Supply Current (Read)

E = VSS, G = VIH, f = 5MHz

9

18

mA

IDD1

Supply Current (Stand-by or

Automatic Stand-by)

E = VDDQ ± 0.2V,

RP = VDDQ ± 0.2V

15

50

µA

IDD2

Supply Current

(Reset)

RP = VSS ± 0.2V

15

50

µA

IDD3 Supply Current (Program)

Program in progress

VPP = 12V ± 5%

Program in progress

VPP = VDD

5

10

mA

10

20

mA

IDD4 Supply Current (Erase)

Erase in progress

VPP = 12V ± 5%

Erase in progress

VPP = VDD

5

20

mA

10

20

mA

IDD5

Supply Current

(Program/Erase Suspend)

E = VDDQ ± 0.2V,

Erase suspended

15

50

µA

IPP

Program Current

(Read or Stand-by)

VPP > VDD

400

µA

IPP1

Program Current

(Read or Stand-by)

VPP ≤ VDD

1

5

µA

IPP2 Program Current (Reset)

RP = VSS ± 0.2V

1

5

µA

IPP3 Program Current (Program)

Program in progress

VPP = 12V ± 5%

Program in progress

VPP = VDD

1

10

mA

1

5

µA

IPP4 Program Current (Erase)

Erase in progress

VPP = 12V ± 5%

Erase in progress

VPP = VDD

3

10

mA

1

5

µA

VIL Input Low Voltage

VDDQ ≥ 2.7V

–0.5

–0.5

0.4

V

0.8

V

VIH Input High Voltage

VDDQ ≥ 2.7V

VDDQ –0.4

0.7 VDDQ

VDDQ +0.4 V

VDDQ +0.4 V

VOL Output Low Voltage

IOL = 100µA, VDD = VDD min,

VDDQ = VDDQ min

0.1

V

VOH Output High Voltage

IOH = –100µA, VDD = VDD min,

VDDQ = VDDQ min

VDDQ –0.1

V

VPP1

Program Voltage (Program or

Erase operations)

1.65

3.6

V

VPPH

Program Voltage

(Program or Erase

operations)

11.4

12.6

V

VPPLK

Program Voltage

(Program and Erase lock-out)

1

V

VLKO

VDD Supply Voltage (Program

and Erase lock-out)

2

V

23/53

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