DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M28W320ECT70N1F データシートの表示(PDF) - STMicroelectronics

部品番号
コンポーネント説明
メーカー
M28W320ECT70N1F
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M28W320ECT70N1F Datasheet PDF : 53 Pages
First Prev 31 32 33 34 35 36 37 38 39 40 Next Last
M28W320ECT, M28W320ECB
Table 29. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h Device Size = 2n in number of bytes
28h
29h
0001h
0000h
Flash Device Interface Code description
2Ah
2Bh
0003h
0000h
Maximum number of bytes in multi-byte program or page = 2n
Number of Erase Block Regions within the device.
2Ch
0002h It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Dh
003Eh Region 1 Information
2Eh
0000h Number of identical-size erase block = 003Eh+1
2Fh
0000h Region 1 Information
30h
0001h Block size in Region 1 = 0100h * 256 byte
31h
0007h Region 2 Information
32h
0000h Number of identical-size erase block = 0007h+1
33h
0020h Region 2 Information
34h
0000h Block size in Region 2 = 0020h * 256 byte
2Dh
0007h Region 1 Information
2Eh
0000h Number of identical-size erase block = 0007h+1
2Fh
0020h Region 1 Information
30h
0000h Block size in Region 1 = 0020h * 256 byte
31h
003Eh Region 2 Information
32h
0000h Number of identical-size erase block = 003Eh=1
33h
0000h Region 2 Information
34h
0001h Block size in Region 2 = 0100h * 256 byte
Value
4 MByte
x16
Async.
8
2
63
64 KByte
8
8 KByte
8
8 KByte
63
64 KByte
39/53

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]