RJP4009ANS データシートの表示（PDF） - Renesas Electronics

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RJP4009ANS

Nch IGBT for Strobe Flash

Renesas Electronics 

RJP4009ANS

Preliminary

Electrical Characteristics

Parameter

Collector-emitter leakage current

Gate-emitter leakage current

Gate-emitter threshold voltage

Collector-emitter saturation voltage

Input capacitance

Symbol

ICES

IGES

VGE(th)

VCE(sat)

Cies

Min.

—

—

0.4

—

—

Typ.

—

—

0.6

4.0

5500

Max.

1

±10

1.2

9.0

—

Unit

μA

μA

V

V

pF

(Tj = 25°C)

Test conditions

VCE = 400 V, VGE = 0 V

VGE = ±6 V, VCS = 0 V

VCE = 10 V, IC = 1 mA

IC = 150 A, VGE = 2.5 V

VCE = 25 V, VGE = 0 V,

f = 1 MHz

Performance Curves

Maximum Pulse Collector Current

(Conductive Capability in Strobe Flash Circuit)

200

150

100

50

0

0 1 2 3456 7

Gate - Emitter Voltage VGE (V)

R07DS0370EJ0200 Rev.2.00

Apr 27, 2011

Page 2 of 4

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