BSS84AK データシートの表示（PDF） - NXP Semiconductors.

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BSS84AK

50 V, 180 mA P-channel Trench MOSFET

NXP Semiconductors. 

BSS84AK

50 V, 180 mA P-channel Trench MOSFET

Rev. 1 — 23 May 2011

Product data sheet

1. Product profile

1.1 General description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

„ Logic-level compatible

„ Very fast switching

„ Trench MOSFET technology

„ ESD protection up to 1 kV

„ AEC-Q101 qualified

1.3 Applications

„ Relay driver

„ High-speed line driver

„ High-side loadswitch

„ Switching circuits

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter

VDS

drain-source voltage

VGS

gate-source voltage

ID

drain current

Static characteristics

RDSon

drain-source on-state

resistance

Conditions

Min Typ Max Unit

Tj = 25 °C

-

-

-50 V

-20 -

20 V

VGS = -10 V; Tamb = 25 °C [1] -

-

-180 mA

VGS = -10 V; ID = -100 mA;

Tj = 25 °C

-

4.5 7.5 Ω

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.

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