BSS84AK データシートの表示（PDF） - NXP Semiconductors.
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BSS84AK Datasheet PDF : 16 Pages
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NXP Semiconductors
BSS84AK
50 V, 180 mA P-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C
IDSS
drain leakage current
VDS = -50 V; VGS = 0 V; Tj = 25 °C
VDS = -50 V; VGS = 0 V; Tj = 150 °C
IGSS
gate leakage current
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = -10 V; ID = -100 mA; Tj = 25 °C
VGS = -10 V; ID = -100 mA; Tj = 150 °C
VGS = -5 V; ID = -100 mA; Tj = 25 °C
gfs
forward transconductance
VDS = -10 V; ID = -100 mA; Tj = 25 °C
Dynamic characteristics
QG(tot)
total gate charge
QGS
gate-source charge
QGD
gate-drain charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDS = -25 V; ID = -200 mA; VGS = -5 V;
Tj = 25 °C
VDS = -25 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
VDS = -30 V; RL = 250 Ω; VGS = -10 V;
RG(ext) = 6 Ω; Tj = 25 °C
VSD
source-drain voltage
IS = -115 mA; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
-50 -
-
V
-1.1 -1.6 -2.1 V
-
-
-1
µA
-
-
-2
µA
-
-
-10 µA
-
-
-10 µA
-
4.5 7.5 Ω
-
8
13.5 Ω
-
5.7 8.5 Ω
-
150 -
mS
-
0.26 0.35 nC
-
0.12 -
nC
-
0.09 -
nC
-
24
36
pF
-
4.5 -
pF
-
1.3 -
pF
-
13
26
ns
-
11
-
ns
-
48 96 ns
-
25
-
ns
-0.48 -0.85 -1.2 V
BSS84AK
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 23 May 2011
© NXP B.V. 2011. All rights reserved.
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