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2SK1836 データシートの表示(PDF) - Hitachi -> Renesas Electronics
部品番号
コンポーネント説明
メーカー
2SK1836
Silicon N-Channel MOS FET / High speed power switching
Hitachi -> Renesas Electronics
2SK1836 Datasheet PDF : 12 Pages
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2SK1836, 2SK1837
Reverse Drain Current
vs. Source Drain Voltage
100
Pulse Test
80
60
40
20
V
GS
= 10 V
0, – 5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage V
SD
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
1 shot Pulse
0.01
10
µ
100
µ
Tc = 25°C
1m
10 m
Pulse Width PW (S)
θ
ch – c(t) =
γ
s(t)
.
θ
ch – c
θ
ch – c = 0.5°C / W, Tc = 25°C
P
DM
D
=
PW
T
PW
T
100 m
1
10
7
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