2SC3127 データシートの表示（PDF） - Renesas Electronics

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2SC3127

Silicon NPN Epitaxial / 2SC3127

Renesas Electronics 

2SC3127

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

20

—

—

V IC = 10 µA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

12

—

—

V IC = 1 mA, RBE = ∞

Emitter cutoff current

IEBO

—

—

10

µA VEB = 3 V, IC = 0

Collector cutoff current

ICBO

—

—

0.5

µA VCB = 12 V, IE = 0

DC current transfer ratio

hFE

30

90

200

VCE = 5 V, IC = 20 mA

Collector output capacitance

Cob

—

0.9

1.5

pF VCB = 5 V, IE = 0, f = 1 MHz

Gain bandwidth product

fT

3.5

4.5

—

GHz VCE = 5 V, IC = 20 mA

Power gain

PG

—

10.5

—

dB VCE = 5 V, IC = 20 mA,

f = 900 MHz

Noise figure

NF

—

2.2

—

dB VCE = 5 V, IC = 5 mA,

f = 900 MHz

Rev.3.00 Aug 10, 2005 page 2 of 7

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