C4242L-TA3-T(2016) データシートの表示（PDF） - Unisonic Technologies

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C4242L-TA3-T
(Rev.:2016)

SWITCHMODE SERIES NPN POWER TRANSISTORS

Unisonic Technologies 

2SC4242

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Emitter Voltage

VCEO

400

V

Collector-Base Voltage

Emitter-Base Voltage

VCBO

450

V

VEBO

8.0

V

Collector Current

Continuous

IC

7.0

A

Peak

ICM

14

A

Base Current

Total Power Dissipation @TC=25°C

Derate Above 25°C

IB

2.0

A

PD

40

W

0.32

W/°C

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 THERMAL DATA

PARAMETER

Thermal Resistance Junction -Case

SYMBOL

θJC

RATINGS

4

 ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

UNIT

°C/W

PARAMETER

SYMBOL TEST CONDITIONS

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

BVCEO

BVCBO

BVEBO

ICBO

IEBO

ICEO=100mA, IB=0

ICBO=1.0mA, IE=0

IEBO=1.0mA, IC=0

VCBO=450V, IE=0

VEBO=8.0V, IC=0

ON CHARACTERISTICS

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

hFE

VCE (SAT)

VBE (SAT)

IC=4.0A, VCE=5.0V

IC=4.0A, IB=800mA

IC=4.0A, IB=800mA

SWITCHING CHARACTERISTICS

On Time

Storage Time

Fall Time

tON

tS

tF

VCC=150V, IC=5.0A

IB1= -IB2=1.0A, RL=30Ω

Note: Pulse Test: Pulse Width=300μs, Duty Cycle ≤ 2.0%

MIN TYP MAX UNIT

400

V

450

V

8.0

V

100 μA

100 μA

10

0.8

V

1.2

V

1.0

μs

2.5

μs

0.5

μs

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R203-033.B

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