MT28S4M16LCTG-10 データシートの表示（PDF） - Micron Technology

部品番号

コンポーネント説明

メーカー

MT28S4M16LCTG-10

SYNCFLASH® MEMORY

Micron Technology 

4 MEG x 16

SYNCFLASH MEMORY

REVISION HISTORY

Rev. 6 ......................................................................................................................................................................... 9/01

• Added erase and program timing characteristics

• Updated the device protect sequence

• Removed the “Preliminary” designation

Rev. 5, PRELIMINARY .............................................................................................................................................. 7/01

Changed tAH, tCKH, tCMH, tDH from 1ns to 2ns

Rev. 4, ADVANCE .................................................................................................................................................... 5/01

Changed deep power-down current from 100µA to 300µA

Rev. 3, ADVANCE .................................................................................................................................................... 4/01

Changes to VCCP Operating Current

Changes to MAX Capacitance Parameters

Rev. 2, ADVANCE .................................................................................................................................................... 2/01

Changes to Absolute Maximum Ratings

Changes to ICC Specifications and Conditions

Original document, Rev. 11/00, ADVANCE ......................................................................................................... 11/00

4 Meg x 16 SyncFlash

MT28S4M16LC_6.p65 – Rev. 6, Pub. 9/01

48

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc.

Share Link: